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| SMG2306A Elektronische Bauelemente 5 A, 30 V, RDS(ON) 35 m N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free DESCRIPTION The SMG2306A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SMG2306A is universally used for all commercial-industrial applications. FEATURES Capable of 2.5V gate drive Lower on-resistance PACKAGE DIMENSIONS A L Drain B Top View C Gate Source F G H K M J REF. A B C D E F E D (Typ.) Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current ,VGS@4.5V Drain Current ,VGS@4.5V Pulsed Drain Current Power Dissipation Operating Junction and Storage Temperature Range 1, 3 3 Symbol VDS VGS ID @Ta=25 ID @Ta=70 IDM PD @Ta=25 Tj, Tstg Ratings 30 12 5 4 20 1.38 -55 ~ +150 0.01 Unit V V A A A W W/ Linear Derating Factor THERMAL DATA Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rthj-a Value 90 Unit /W 01-June-2005 Rev. B Page 1 of 4 SMG2306A Elektronische Bauelemente 5 A, 30 V, RDS(ON) 35 m N-Channel Enhancement Mode Power Mos.FET ELECTRICAL CHARACTERISTICS Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Symbol BVDSS BVDSS Min. 30 0.5 - Typ. 0.1 13 8.5 1.5 3.2 6 20 20 3 660 90 70 Max. 1.2 100 1 25 30 35 50 90 15 1050 - Unit V V/ V S nA uA uA Test Conditions VGS=0, ID=250uA Reference to 25, ID=1mA VDS=VGS, ID=250uA VDS=5V, ID=5A VGS= 12V VDS=30V, VGS=0 VDS=24V, VGS=0 VGS=10V, ID=5A /Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25) Drain-Source Leakage Current(Tj=70) VGS(th) gfs IGSS IDSS Static Drain-Source On-Resistance RDS(ON) - m VGS=4.5V, ID=5A VGS=2.5V, ID=2.6A VGS=1.8V, ID=1.0A ID=5A VDS=16V VGS=4.5V VDS=15V ID=5A VGS=10V RG=3.3 RD=3 VGS=0V VDS=25V f=1.0MHz Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss - nC ns pF SOURCE-DRAIN DIODE Parameter Forward On Voltage2 Reverse Recovery Time2 Reverse Recovery Charge Symbol VSD Trr Qrr Min. - Typ. 14 7 Max. 1.2 - Unit V ns nC Test Conditions IS=1.2A, VGS=0 IS=5A, VGS=0V dI/dt=100A/us Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width300us, duty cycle2%. 2 3. Surface mounted on 1 in copper pad of FR4 board; 270/W when mounted on Min. copper pad. 01-June-2005 Rev. B Page 2 of 4 SMG2306A Elektronische Bauelemente 5 A, 30 V, RDS(ON) 35 m N-Channel Enhancement Mode Power Mos.FET CHARACTERISTIC CURVE 01-June-2005 Rev. B Page 3 of 4 SMG2306A Elektronische Bauelemente 5 A, 30 V, RDS(ON) 35 m N-Channel Enhancement Mode Power Mos.FET 01-June-2005 Rev. B Page 4 of 4 |
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